Resumo O estudo e desenvolvimento de compósitos cerâmicos possui elevada importância devido às propriedades que esses materiais podem fornecer, tais como elevada constante dielétrica e baixa perda dielétrica na faixa de RF e micro-ondas. Tais características tornam esse tipo de material aplicável a diversos segmentos, como no setor de telecomunicações, em especial em antena dielétrica ressonadora (DRA). Compósitos cerâmicos fornecem novos materiais com uma gama de propriedades que podem ser controladas através das fases para atender as especificações de uma determinada aplicação. Esse estudo teve como objetivo sintetizar e caracterizar o compósito baseado em hexaferrita (BFO) e cerâmicas à base de bismuto (BZN) visando aplicação como DRA. Os compósitos foram caracterizados por FTIR, DRX e MEV. Os compósitos apresentaram microestrutura compacta e heterogênea, indicando que a sinterização em 1000 °C/150 min foi adequada para obtenção dos compósitos cerâmicos, sendo o que compósito BFO-BZNβ se mostrou menos poroso que o compósito BFO-BZNα.

Abstract The study and development of ceramic composites are important because of the properties that these materials can provide, such as high dielectric constant and low dielectric loss in the RF and microwave range. Such characteristics make this type of material appropriate to several segments, such as in the telecommunication sector, especially in dielectric resonator antenna (DRA). Ceramic composites provide new materials with a range of properties that can be controlled through the phases to meet the specifications of a given application. This study aimed to synthesize and characterize the composite based on hexaferrite (BFO) and ceramics based on bismuth (BZN), aiming application as DRA. The composites were characterized by FTIR, XRD, and SEM. The composites presented a compact and heterogeneous microstructure, indicating that the sintering at 1000 °C/150 min was adequate for obtaining the ceramic composites; besides, BFO-BZNβ composite was shown to be less porous than the composite BFO-BZNα.

In this work we report on a comparison of some theoretical models usually used to fit the dependence on temperature of the fundamental energy gap of semiconductor materials. We used in our investigations the theoretical models of Viña, Pässler-p and Pässler-ρ to fit several sets of experimental data, available in the literature for the energy gap of GaAs in the temperature range from 12 to 974 K. Performing several fittings for different values of the upper limit of the analyzed temperature range (Tmax), we were able to follow in a systematic way the evolution of the fitting parameters up to the limit of high temperatures and make a comparison between the zero-point values obtained from the different models by extrapolating the linear dependence of the gaps at high T to T = 0 K and that determined by the dependence of the gap on isotope mass. Using experimental data measured by absorption spectroscopy, we observed the non-linear behavior of Eg(T) of GaAs for T > ΘD.

The structure of magnetic field lines in a tokamak with reversed magnetic shear is investigated by means of analytically derived area-preserving non-twist Poincaré maps. The basic configuration is the magnetic field produced by an ergodic limiter, superimposed to the tokamak equilibrium field in suitable coordinates. We consider the cases of one and two resonant modes, focusing on magnetic island dimerization and the formation of a transport barrier in the chaotic layer of field lines.

Chaotic magnetic field lines play an important role in plasma confinement by tokamaks. They can either be generated in the plasma as a result of natural instabilities or artifficially produced by external conductors, like resonant helical windings and ergodic magnetic limiters. This is a review of works carried out at the Universidade de São Paulo and Universidade Federal do Paraná on theoretical and experimental aspects of generation and control of chaotic magnetic field lines in tokamaks.

Photoluminescence (PL) and excitation PL measurements have been performed at different temperatures in a number of lattice-matched GaAs/In0.49Ga0.51P quantum wells, where the uctuations of the potential energy are comparable with the thermal energy of the photocreated carriers. Two samples with different well widths allow to observe a series of anomalous e ects in their optical response. The observed effects are related to the disorder in the interface, characterizing uctuations in the confinement potential energy. It is proposed that the carrier relaxation processes occur either at the local minima or at the absolute minimum of the confinement potential, depending on the ratio of the thermal energy and the magnitude of the potential fluctuations.